Dynamical effects of X-ray scattering in laue geometry for Si crystals with structure defects
- 16 April 1984
- journal article
- structure
- Published by Wiley in Physica Status Solidi (a)
- Vol. 82 (2) , 365-371
- https://doi.org/10.1002/pssa.2210820204
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Effect of dislocation density on integrated intensity of X-ray scattering by silicon crystals in Laue geometryActa Crystallographica Section A Foundations of Crystallography, 1983
- Dynamical Oscillations of X-Ray Integrated Intensity in Laue Diffraction and Their Temperature Dependences for Si Dislocation CrystalsPhysica Status Solidi (a), 1982
- Statistical dynamical theory of crystal diffraction. I. General formulationActa Crystallographica Section A, 1980
- Variable-path Laue measurements and extinctionActa Crystallographica Section A, 1977
- Effect of Defect Clustering on Anomalous X-Ray TransmissionPhysical Review B, 1970
- The role of lattice vibrations in dynamical theory of X-raysActa Crystallographica Section A, 1968
- Dynamical Treatment of the Thermal Diffuse Scattering of X-RaysPhysica Status Solidi (b), 1968
- Temperature Dependence of X-Ray Absorption by Crystals 1. Photo-Electric AbsorptionJournal of the Physics Society Japan, 1964
- Integrated Intensities of the Diffracted and Transmitted X-rays due to ideally Perfect Crystal (Laue Case)Journal of the Physics Society Japan, 1955