In Situ Infrared Spectroscopy on the Wet Chemical Oxidation of Hydrogen-Terminated Si Surfaces

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Abstract
In situ infrared spectroscopy was used to observe the early stage of oxidation on hydrogen-terminated Si(100) and (111) in solution. The observation confirmed that the oxidation starts with the insertion reaction of oxygen atoms to the back bonds of the topmost silicon atoms in H2O2 solution. It was found both that the back bond and Si–H bond were oxidized in ozonized water. The dependence of the oxidation reaction of the Si–H bond and its back bond on surface orientation was discussed and the evidence of island growth of the oxide film was shown.