Nanoscale Gap Fabrication by Carbon Nanotube-Extracted Lithography (CEL)
- 9 July 2003
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 3 (8) , 1029-1031
- https://doi.org/10.1021/nl0342500
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Nanoscale organic transistors that use source/drain electrodes supported by high resolution rubber stampsApplied Physics Letters, 2003
- Fabrication of Sub-50-nm Solid-State Nanostructures on the Basis of Dip-Pen NanolithographyNano Letters, 2002
- Single-walled carbon nanotube electronicsIEEE Transactions on Nanotechnology, 2002
- Fabrication of nanocontacts for molecular devices using nanoimprint lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002
- Single-electron detector and counterApplied Physics Letters, 2000
- Room-temperature Al single-electron transistor made by electron-beam lithographyApplied Physics Letters, 2000
- Single- and multi-wall carbon nanotube field-effect transistorsApplied Physics Letters, 1998
- Self-assembly of single electron transistors and related devicesChemical Society Reviews, 1998
- Sub-20 nm x-ray nanolithography using conventional mask technologies on monochromatized synchrotron radiationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Electrostatic trapping of single conducting nanoparticles between nanoelectrodesApplied Physics Letters, 1997