Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS Technology
- 19 December 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 53 (6) , 3479-3486
- https://doi.org/10.1109/tns.2006.885007
Abstract
Accelerated alpha-soft error rate (SER) measurements are carried out on regular and radiation-hardened SRAMs in a 65 nm CMOS technology. Results are first compared to previous experimental radiation data in 130 nm and 90 nm. Second, the SER increase measured in 65 nm is investigated through (i) multiple cell upsets (MCU) counting and classification from experimental bitmap errors and (ii) full 3-D device simulations on SRAM bitcells to assess the PMOS-off sensitivity and the NMOS SEU threshold LET (LETth) of each tested technologies. Finally, process changes are also scanned to shed light on the 65 nm SRAM response to alpha particlesKeywords
This publication has 14 references indexed in Scilit:
- Impacts of front-end and middle-end process modifications on terrestrial soft error rateIEEE Transactions on Device and Materials Reliability, 2005
- Chip-level soft error estimation methodIEEE Transactions on Device and Materials Reliability, 2005
- Radiation-induced soft errors in advanced semiconductor technologiesIEEE Transactions on Device and Materials Reliability, 2005
- Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMsIEEE Transactions on Nuclear Science, 2005
- Comprehensive study on layout dependence of soft errors in CMOS latch circuits and its scaling trend for 65 nm technology node and beyondPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Contribution of device simulation to SER understandfngPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Soft error rate scaling for emerging SOI technology optionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- The impact of technology scaling on soft error rate performance and limits to the efficacy of error correctionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domainIEEE Transactions on Nuclear Science, 1998
- Rate prediction for single event effects-a critiqueIEEE Transactions on Nuclear Science, 1992