SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain
- 1 December 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 45 (6) , 2534-2543
- https://doi.org/10.1109/23.736495
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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