Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation

This publication has 14 references indexed in Scilit:

• The effects of ion track structure in simulating single event phenomena
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Influence of cell structure on the SEU sensitivity of a SRAM
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Monte-Carlo simulation of the dynamic behavior of a CMOS inverter struck by a heavy ion
  IEEE Transactions on Nuclear Science, 1994
• Three-dimensional numerical simulation of single event upset of an SRAM cell
  IEEE Transactions on Nuclear Science, 1993
• Numerical simulation of heavy ion charge generation and collection dynamics
  IEEE Transactions on Nuclear Science, 1993
• Low temperature proton induced upsets in NMOS resistive load static RAM
  IEEE Transactions on Nuclear Science, 1988
• Single event upset in irradiated 16 K CMOS SRAMs
  IEEE Transactions on Nuclear Science, 1988
• The Size Effect of Ion Charge Tracks on Single Event Multiple-Bit Upset
  IEEE Transactions on Nuclear Science, 1987
• Two-Dimensional Simulation of Single Event Indujced Bipolar Current in CMOS Structures
  IEEE Transactions on Nuclear Science, 1984
• Semiconductor device simulation
  IEEE Transactions on Electron Devices, 1983