Single event upset in irradiated 16 K CMOS SRAMs

This publication has 8 references indexed in Scilit:

• SEU Measurements Using 252Cf Fission Particles, on CMOS Static RAMs, Subjected to a Continuous Period of Low Dose Rate 60Co Irradiation
  IEEE Transactions on Nuclear Science, 1987
• Quantification of the Memory Imprint Effect for a Charged Particle Environment
  IEEE Transactions on Nuclear Science, 1987
• A Simple Method to Identify Radiation and Annealing Biases That Lead to Worst-Case CMOS Static Ram Postirradiation Response
  IEEE Transactions on Nuclear Science, 1987
• Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing
  IEEE Transactions on Nuclear Science, 1986
• Mechanisms Leading to Single Event Upset
  IEEE Transactions on Nuclear Science, 1986
• Heavy Ion-Induced Single Event Upsets of Microcircuits; A Summary of the Aerospace Corporation Test Data
  IEEE Transactions on Nuclear Science, 1984
• Physical Mechanisms Contributing to Device "Rebound"
  IEEE Transactions on Nuclear Science, 1984
• Comparison of Analytical Models and Experimental Results for Single Event Upset in CMOS SRAMs
  IEEE Transactions on Nuclear Science, 1983