Quantification of the Memory Imprint Effect for a Charged Particle Environment
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (6) , 1414-1418
- https://doi.org/10.1109/tns.1987.4337490
Abstract
The effects of total accumulated dose on the single-event vulnerability of NMOS resistive-load SRAM's are investigated. The bias-dependent shifts in device parameters can imprint the memory state present during exposure or erase the imprinted state. Analysis of these effects is presented along with an analytic model developed for the quantification of these effects. The results indicate that the imprint effect is dominated by the difference in the threshold voltage of the n-channel devices.Keywords
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