Mechanisms Leading to Single Event Upset

1 January 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 33 (6) , 1577-1580
https://doi.org/10.1109/tns.1986.4334644

Abstract

SRAM cell recovery time following a 140 MeV Krypton strike on a Sandia SRAM is modelled using a two-dimensional transient numerical simulator and circuit code. Strikes at both n- and p-channel "off" drains are investigated. Four principle results are obtained. The recovery time after a strike is strongly dependent on the drive of the restoring transistor. A struck "off" p-channel drain-to-gate capacitive coupling has a significant effect on recovery in SRAM with feedback resistors. Recovery time is approximately linear with LET over LET in the range to 0.4 pC/¿. Finally, an experimental n-channel SEU has been observed in a Sandia SRAM without feedback resistors.

Keywords

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