SEU Measurements Using 252Cf Fission Particles, on CMOS Static RAMs, Subjected to a Continuous Period of Low Dose Rate 60Co Irradiation
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (6) , 1287-1291
- https://doi.org/10.1109/TNS.1987.4337467
Abstract
SEU measurements have been made on a number of CMOS static RAMs over a period of eight months while they were being continuously irradiated with 60 Co gamma rays. The results are discussed and compared with those of other workers using different methods.Keywords
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