The Use of Cf-252 to Measure Latchup Cross Sections as a Function of LET
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 33 (6) , 1642-1645
- https://doi.org/10.1109/tns.1986.4334656
Abstract
Latchup cross-section measurements of HM6504, HM6641, HD6434, and HM6516, all CMOS devices were performed at various values of LET near threshold by adjusting the air pressure between the source and device. The energies of representative light and heavy fission fragments at the device were determined using an analytical approach which was considered preferable to spectrum measurements if the pulse-height defect in a silicon detector is unusually large.Keywords
This publication has 7 references indexed in Scilit:
- An Experimental Study of the Effect of Absorbers on the Let of the Fission Particles Emitted by CF-252IEEE Transactions on Nuclear Science, 1985
- Use of CF-252 to Determine Parameters for SEU Rate CalculationIEEE Transactions on Nuclear Science, 1985
- Investigation of Heavy Particle Induced Latch-Up, Using a Californium-252 Source, in CMOS SRAMs and PROMsIEEE Transactions on Nuclear Science, 1984
- Heavy Ion-Induced Single Event Upsets of Microcircuits; A Summary of the Aerospace Corporation Test DataIEEE Transactions on Nuclear Science, 1984
- A calibration procedure for the response of silicon surface-barrier detectors to heavy ionsNuclear Instruments and Methods, 1974
- Measurements of the pulse height defect and its mass dependence for heavy-ion silicon detectorsNuclear Instruments and Methods, 1973
- Range and stopping-power tables for heavy ionsAtomic Data and Nuclear Data Tables, 1970