Single particle-induced latchup

1 April 1996

journal article
research article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 43 (2) , 522-532
https://doi.org/10.1109/23.490898

Abstract

This paper presents an up-to-date overview of the single-event latchup (SEL) hard failure mode encountered in electronic device applications involving heavy ion environment. This phenomenon is specific to CMOS technology. Single-event latchup is discussed after a short description of the effects induced by the interaction of a heavy ion with silicon. Understanding these effects is necessary to understand the different failures. This paper includes a description of the latchup phenomenon and the different triggering modes, reviews of models and hardening solutions, and finally presents new developments in simulation approaches.

Keywords

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