Strain relaxation during the layer by layer growth of cubic CdSe onto ZnSe
- 30 December 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (1) , 43-45
- https://doi.org/10.1063/1.1534941
Abstract
A detailed reflection high-energy electron diffraction analysis shows relevant features of the lattice parameter relaxation of CdSe thin films grown in a layer-by-layer mode onto ZnSe. In situ investigations of different azimuths show a clear lattice parameter oscillation in the [110] azimuth. The lattice parameter has a minimum value (similar to that of ZnSe) during Se exposure steps, and a higher and increasing lattice parameter during Cd exposure steps. The behavior is ascribed to the formation of CdSe islands during Cd exposure steps. The cumulative effect in CdSe exposure steps is considered to be a consequence of a decrease in the island size with the number of cycles. Actual plastic deformation does occur after 5 ML.Keywords
All Related Versions
This publication has 6 references indexed in Scilit:
- In-plane lattice spacing oscillatory behaviour during the two-dimensional hetero- and homoepitaxy of metalsSurface Science, 2000
- Reflection high-energy electron diffraction measurement of lattice-parameter oscillations during the homoepitaxial growth of CdTePhysical Review B, 1998
- Atomic layer epitaxy of CdTe and MnTeJournal of Applied Physics, 1996
- Oscillatory Surface In-Plane Lattice Spacing during Growth of Co and of Cu on a Cu(001) Single CrystalPhysical Review Letters, 1995
- Anisotropic relaxation during the first stages of the growth of ZnTe/(001) CdTe strained layers studied by reflection high energy electron diffractionApplied Physics Letters, 1995
- Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materialsPhysical Review Letters, 1993