Gate-voltage dependence of low-frequency noiseinGaN/AlGaN heterostructure field-effect transistors
- 11 May 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (10) , 912-913
- https://doi.org/10.1049/el:20000680
Abstract
Introduction: Investigation of low-frequency (1/f) noise in GaN/AlGaN heterostructurefield-effect transistors (HFET) has currently attracted a lot of attention. This is due to ademonstrated potential of GaN HFETs for high-power density and high frequencyapplications [1-2], as well as due to unusual properties of the low-frequency noise inthese devices. The latter include large noise spectral density, several orders of magnitudedifferences in Hooge parameter values, large deviation of...Keywords
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