Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors
- 4 October 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (14) , 2064-2066
- https://doi.org/10.1063/1.124917
Abstract
We examined low-frequency noise in doped and undoped channel GaN/AlGaN/SiC heterostructure field-effect transistors with different Al content in the barrier. The observed noise spectra follow the 1/fγ law with 0.8⩽γ⩽1.2 for frequencies f up to 100 kHz. Our results indicate two orders of magnitude reduction in the input-referred noise spectral density in the undoped channel devices with respect to the noise density in the doped channel devices of comparable electric characteristics. Low temperature measurements reveal generation—recombination-type peaks in the spectra of the doped channel devices. Effects of the piezoelectric charges at the GaN/AlGaN interface are also discussed.Keywords
This publication has 11 references indexed in Scilit:
- Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communicationsIEEE Transactions on Microwave Theory and Techniques, 1999
- Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistorsIEEE Electron Device Letters, 1998
- High performance AlGaN/GaN HEMT with improved OhmiccontactsElectronics Letters, 1998
- AlGaN/GaN high electron mobility field effect transistors with low 1/f noiseApplied Physics Letters, 1998
- Low-frequency noise in GaN/GaAlN heterojunctionsApplied Physics Letters, 1998
- High-power 10-GHz operation of AlGaN HFET's on insulating SiCIEEE Electron Device Letters, 1998
- Piezoelectric charge densities in AlGaN/GaN HFETsElectronics Letters, 1997
- The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structureJournal of Applied Physics, 1993
- Noise spectroscopy of deep level (D X) centers in GaAs-AlxGa1−xAs heterostructuresJournal of Applied Physics, 1988
- Spectral dependence of noise on gate bias in n-MOSFETSSolid-State Electronics, 1987