Frequency shift in the photoluminescence of nanometric SiOx: surface bond contraction and oxidation
- 17 November 1999
- journal article
- letter
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 11 (48) , L547-L550
- https://doi.org/10.1088/0953-8984/11/48/104
Abstract
The frequency of photoluminescence is determined by the gap between the conduction and valence band. The width of the band gap depends on the crystal field and the chemical reaction, because the crystal field defines the band structure and the reaction repopulates with valence electrons. It is derived that the surface bond contraction and the rise in surface-to-volume ratio enhance the crystal field and determine the trend of frequency change, while oxidation enhances this behaviour by adding a constant.Keywords
This publication has 9 references indexed in Scilit:
- Mechanism of photoluminescence of Si nanocrystals in SiO2fabricated by ion implantation: the role of interactions of nanocrystals and oxygenJournal of Physics: Condensed Matter, 1999
- BEHIND THE QUANTUM CONFINEMENT AND SURFACE PASSIVATION OF NANOCLUSTERSSurface Review and Letters, 1999
- The lattice contraction of nanometre-sized Sn and Bi particles produced by an electrohydrodynamic techniqueJournal of Physics: Condensed Matter, 1999
- Optical properties of porous siliconPublished by Elsevier ,1998
- A model of bonding and band-forming for oxides and nitridesApplied Physics Letters, 1998
- Exposure-resolved VLEED from the O-Cu(001): bonding dynamicsVacuum, 1997
- Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous SiPhysical Review B, 1995
- Mechanism of the visible luminescence in porous siliconSolid State Communications, 1993
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990