Off-state breakdown walkout in high-power PHEMT's
- 24 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
PECVD nitride passivated high-power AlGaAs/InGaAs PHEMTs processed with different surface conditions and on epitaxial wafers from different vendors were fabricated to study the off-state breakdown walkout. It has been shown that breakdown walkout of passivated high-power PHEMTs depends on the surface process conditions and to a less degree on the starting wafers. The breakdown walkout shows no noticeable recovery after annealing at 240/spl deg/C for 400 hours, indicating a permanent improvement. The results suggest an alternative to optimize the PHEMT's process for reliability and to improve the breakdown voltage. Author(s) Chou, Y.C. Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA Li, G.P. ; Yu, K.K. ; Wu, C.S. ; Chu, P. ; Hou, L.D. ; Midford, T.A.Keywords
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