On the Investigation of Power and Reliability Performance of Pseudomorphic AlGaAs/InGaAs HEMT's

This publication has 12 references indexed in Scilit:

• High efficiency microwave power AlGaAs/InGaAs PHEMTs fabricated by dry etch single gate recess
  IEEE Transactions on Electron Devices, 1995
• Optimization of a power pseudomorphic double heterojunction FET
  Microwave and Optical Technology Letters, 1994
• High-efficiency HBT MMIC linear power amplifier for L-band personal communications systems
  IEEE Microwave and Guided Wave Letters, 1994
• Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs
  IEEE Transactions on Electron Devices, 1993
• Mobile broadband system (MBS): Trends and impact on 60 GHz band MMIC development
  Electronics & Communication Engineering Journal, 1993
• 0.25- mu m pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technology
  IEEE Transactions on Electron Devices, 1992
• Optimization of ohmic contacts for reliable heterostructure GaAs materials
  Journal of Electronic Materials, 1990
• Microwave power double-heterojunction HEMT's
  IEEE Transactions on Electron Devices, 1986
• Control of gate—Drain avalanche in GaAs MESFET's
  IEEE Transactions on Electron Devices, 1980
• Light emission and burnout characteristics of GaAs power MESFET's
  IEEE Transactions on Electron Devices, 1978