High-efficiency HBT MMIC linear power amplifier for L-band personal communications systems
- 1 March 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 4 (3) , 65-67
- https://doi.org/10.1109/75.275582
Abstract
A heterojunction bipolar transistor (HBT) MMIC linear power amplifier is demonstrated for the 1.9 GHz Japanese Personal Handy Phone utilizing the /spl pi//4 DQPSK modulation technique. At an operating voltage of only 3 V, an output power of 21 dBm and a power added efficiency of 35% are obtained along with a modulation vector error of 4.5% and an adjacent channel interference of /spl minus/60 dBc in +//spl minus/600 kHz offset frequency bands.<>Keywords
This publication has 3 references indexed in Scilit:
- 1W power amplifier MMICs for mm-wave applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- High-efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phonePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVDElectronics Letters, 1991