Optimization of a power pseudomorphic double heterojunction FET
- 20 December 1994
- journal article
- research article
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 7 (18) , 871-873
- https://doi.org/10.1002/mop.4650071817
Abstract
In this article we report the optimization of a power double heterostructure pseudomorphic FET. A ID model is used for charge control calculation and a 2D simulation for breakdown analysis. These simple models have allowed us to determine the suitable doping densities and device structure for maximum current density and breakdown performances. The results have been applied to the design of a 0.3‐μm × 70‐μm device. At 33 GHz it delivers an output power density of 1 W/mm with 5.7‐dB linear gain and 38% power added efficiency. © 1994 John Wiley & Sons, Inc.Keywords
This publication has 7 references indexed in Scilit:
- A high efficiency 0.25 mu m pseudomorphic HEMT power processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etchingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 1W/mm power pseudomorphic HFET with optimised recesstechnologyElectronics Letters, 1994
- An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applicationsIEEE Transactions on Microwave Theory and Techniques, 1993
- Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mmIEEE Electron Device Letters, 1991
- Ku-band high efficiency high gain pseudomorphic HEMTElectronics Letters, 1991
- Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETsIEEE Transactions on Electron Devices, 1988