Breakdown walkout in pseudomorphic HEMT's
- 1 April 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (4) , 543-546
- https://doi.org/10.1109/16.485535
Abstract
In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electrons in pseudomorphic AlGaAs-InGaAs-GaAs HEMTs (PHEMTs). Experiments performed on passivated commercial PHEMTs show that hot electron stress cycles induce a large and permanent increase of the gate-drain breakdown voltage. Three-terminal and two-terminal stress conditions are compared, the former producing a much larger walkout due to hot electrons flowing in the channel. Experimental results indicate that a build-up of negative charge in the region between gate and drain is responsible for the breakdown walkout, due to a local widening of the depletion region and a reduction of the peak electric field.Keywords
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