Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMTs induced by hot-electrons
- 1 January 1995
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
New failure mechanisms induced by hot-electrons in AlGaAs/InGaAs pseudomorphic HEMTs have been identified by means of accelerated testing of commercial devices from four different suppliers. Different degradation modes have been observed, depending on the device type, namely: (a) recoverable increase of I/sub D/ and |V/sub T/|, which has been attributed to recombination of electrons trapped under the gate with holes generated by impact ionization; (b) enhancement of the kink in the output characteristics, possibly due to the generation of deep levels with subsequent electron trapping/detrapping; (c) permanent increase of the breakdown voltage, due to creation of negatively charged traps in the gate-drain region, yielding a wider space-charge region, hence a reduced maximum electric field. The link between the observed degradation modes and the underlying physical mechanisms is investigated by means of different techniques, and the main functional effects of the degradation modes are addressed.Keywords
This publication has 14 references indexed in Scilit:
- A high efficiency V-band monolithic HEMT power amplifierIEEE Microwave and Guided Wave Letters, 1994
- Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMTs from 10 Hz to 18 GHzIEEE Transactions on Electron Devices, 1993
- Low-frequency noise in heterojunction FETs with low-temperature bufferIEEE Transactions on Electron Devices, 1992
- Impact ionization and light emission in AlGaAs/GaAs HEMT'sIEEE Transactions on Electron Devices, 1992
- Correlation between surface-state density and impact ionization phenomena in GaAs MESFET'sIEEE Transactions on Electron Devices, 1991
- Experimental evidence for trap-induced photoconductive kink in AlGaAs/GaAs HEMTsElectronics Letters, 1990
- Impact ionization in GaAs MESFETsIEEE Electron Device Letters, 1990
- Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomaliesIEEE Transactions on Electron Devices, 1988
- Hot-electron-induced MOSFET degradation at low temperaturesIEEE Electron Device Letters, 1985
- Temperature dependence of hot-electron-induced degradation in MOSFET'sIEEE Electron Device Letters, 1984