Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMTs from 10 Hz to 18 GHz
- 1 May 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (5) , 852-858
- https://doi.org/10.1109/16.210190
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Using cold FET to check accuracy of microwave noise parameter test setElectronics Letters, 1991
- Evaluation of the trap concentration in highly doped semiconductors from low-frequency noise spectraJournal of Applied Physics, 1989
- Ultra-low-noise millimeter-wave pseudomorphic HEMTsIEEE Transactions on Microwave Theory and Techniques, 1989
- Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1987
- Correlation between low-frequency noise and low-temperature performance of two-dimensional electron gas FET'sIEEE Transactions on Electron Devices, 1986
- On the low-temperature degradation of (AlGa)As/GaAs modulation-doped field-effect transistorsIEEE Transactions on Electron Devices, 1986
- High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistorsIEEE Electron Device Letters, 1985
- An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMTIEEE Electron Device Letters, 1985
- On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperaturesIEEE Transactions on Electron Devices, 1984
- Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterizationIEEE Transactions on Electron Devices, 1984