The effect of doping-dependent mobility on base transit time in transistors
- 31 December 1975
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (12) , 1142-1144
- https://doi.org/10.1016/0038-1101(75)90182-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Optimum impurity distribution for minimum base transit time in junction transistorsInternational Journal of Electronics, 1974
- Transit time in the base region of drift transistors considering recombination and variable mobilitySolid-State Electronics, 1974
- On the variation of cut-off frequency with emitter end concentration of a diffused base transistorSolid-State Electronics, 1973
- Base transport factor calculations for transistors with complementary error function and Gaussian base doping profilesIEEE Transactions on Electron Devices, 1971
- Optimum doping distribution for minimum base transit timeIEEE Transactions on Electron Devices, 1967
- Influence of mobility and lifetime variations on drift-field effects in silicon-junction devicesIEEE Transactions on Electron Devices, 1967