Negative-Resistance Current-Voltage Characteristics of an Indium Antimonide p+−p−n+ Diode

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Abstract
The negative resistance volt‐ampere characteristic of a solution‐grown indium antimonide p+−p−n+ diode is presented. The curve can be understood through the use of crude models. A prebreakdown nonlinearity and the negative resistance are attributed to the growth of a high‐conductivity plasma across the sample. A shallow negative resistance in the postbreakdown region is thought to be caused by lateral expansion of this plasma. Finally, a postbreakdown characteristic of the form I ∝ V3 is explained in terms of a double‐injection recombination‐limited current with a current‐dependent effective diode length.

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