Radiation-Hardening Static NMOS Rams
- 1 January 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 26 (6) , 5060-5064
- https://doi.org/10.1109/tns.1979.4330273
Abstract
The results of an effort to total-dose radiation harden N-channel static random-access-memories are described. Both an aluminum-gate and a silicon-gate process were hardened to a level greater than 104 rads(Si) on a semiconductor memory vendor's production line. The aluminum-gate RAMs have been found to operate to well above 105 rads(Si) at low dose rates, suggesting their suitability for space applications.Keywords
This publication has 3 references indexed in Scilit:
- Total Dose Tfsting of Several Types of MOS MicroprocessorsIEEE Transactions on Nuclear Science, 1978
- Ionizing Radiation Effects on Various Commercial NMOS MicroprocessorsIEEE Transactions on Nuclear Science, 1977
- Radiation Effects on Commercial 4-Kilobit NMOS MemoriesIEEE Transactions on Nuclear Science, 1976