Electron capture processes in ZnS: The role of Al related and other donors
- 1 December 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (11) , 3923-3925
- https://doi.org/10.1063/1.337795
Abstract
A transient electron spin resonance experiment shows that the Al-related donor in ZnS plays an insignificant role in electron-capture processes, which are dominated by a 35-meV native donor of unknown nature. The methods of determining effective capture cross sections of these donors are discussed.This publication has 9 references indexed in Scilit:
- Photoelectron paramagnetic resonance studies of the dynamical parameters of shallow donor states in ZnS lattice (ZnS:Sc, ZnS:Al)Journal of Applied Physics, 1986
- Photoelectron paramagnetic resonance studies of the nature of donor-acceptor pair-recombination processes in ZnS:Cr,ScPhysical Review B, 1985
- Configuration coordinate diagram for the E4 defect in electron-irradiated GaPJournal of Applied Physics, 1985
- On the application of the photo-EPR technique to the studies of photoionization, DAP recombination, and non-radiative recombination processesPhysica Status Solidi (a), 1985
- Aluminium-related point defects in wurtzite-type ZnSJournal of Physics C: Solid State Physics, 1985
- Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors. II. Al and Te Doped PhosphorsJapanese Journal of Applied Physics, 1980
- Spin-dependent donor-acceptor pair recombination in ZnS crystals showing the self-activated emissionJournal of Physics C: Solid State Physics, 1979
- Mechanism of the Killer Effect of Iron-Group Ions on the Green Luminescence in ZnS:Cu, Al PhosphorsJapanese Journal of Applied Physics, 1975
- Infrared absorption due to donor states in ZnS crystalsJournal of Physics and Chemistry of Solids, 1968