Atomic mixing in the depth-dependent diffusion approximation
- 1 January 1982
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 68 (1) , 19-23
- https://doi.org/10.1080/01422448208226880
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- On the influence of atomic mixing on the evolution of ion-implantation profilesPhilosophical Magazine A, 1982
- Ion beam mixing in amorphous silicon II. Theoretical interpretationNuclear Instruments and Methods, 1981
- Theoretical aspects of atomic mixing by ion beamsNuclear Instruments and Methods, 1981
- Distortion of depth profiles during ion bombardment II. Mixing mechanismsNuclear Instruments and Methods, 1981
- A first order diffusion approximation to atomic redistribution during ion bombardment of solids, II. finite range approximationRadiation Effects, 1981
- A first order diffusion approximation to atomic redistribution during ion bombardment of solids: I. Infinite range approximationRadiation Effects, 1981
- Implant diffusion with position-dependent diffusion coefficientRadiation Effects, 1981
- Distortion of depth profiles during sputteringNuclear Instruments and Methods, 1980
- Stochastic Problems in Physics and AstronomyReviews of Modern Physics, 1943