Electron and phonon self-energies in heavily doped germanium and silicon
- 28 February 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (1) , 31-38
- https://doi.org/10.1016/0038-1101(85)90207-2
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- The influence of free carriers on the equilibrium lattice parameter of semiconductor materialsPhysica Status Solidi (a), 1983
- Impurity-band tails based on semiempirical pseudopotentials in heavily doped semiconductorsPhysical Review B, 1983
- Self-energies of phonons in heavily doped- and-type siliconPhysical Review B, 1982
- Electronic Structure and Spectra of Heavily Doped-Type SiliconPhysical Review Letters, 1982
- Optical Properties of Heavily Doped Silicon between 1.5 and 4.1 eVPhysical Review Letters, 1981
- Solids with thermal or static disorder. I. One-electron propertiesPhysical Review B, 1978
- Effects of interband excitations on Raman phonons in heavily dopedPhysical Review B, 1978
- Effects of Free Carriers on Zone-Center Vibrational Modes in Heavily Doped-type Si. I. Acoustical ModesPhysical Review B, 1973
- Effect of Carrier Concentration on the Raman Frequencies of Si and GePhysical Review B, 1972
- Properties of Heavily Doped n-Type GermaniumJournal of Applied Physics, 1961