Effect of free carriers on the linewidth enhancement factor of InGaAs/InP (strained-layer) multiple quantum well lasers
- 18 May 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (20) , 2466-2468
- https://doi.org/10.1063/1.106935
Abstract
In this letter the linewidth enhancement factor measured from a tensile strained, a compressively strained, and a lattice matched InGaAs/InP multiple quantum well laser is analyzed taking free- carrier effects into account. We find that the free carriers in the wells of compressively strained and lattice matched structures degrade the linewidth enhancement factor by about 40% due to the plasma effect. In tensile strained TM polarized lasers however, carrier movement parallel to the E vector is inhibited due to the quantum confinement, allowing a linewidth enhancement factor as low as 1.6 at the peak wavelength. Heterobarrier carrier leakage must be prevented using sufficiently large band-gap barrier and separate confinement layers, otherwise the free carriers in these layers result in an additional degradation of the linewidth enhancement factor.Keywords
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