Selectively masked MBE regrowth
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 896-899
- https://doi.org/10.1016/0022-0248(93)90755-l
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Doping superlattices grown in channeled GaAs substrates by molecular beam epitaxy through a built-in shadow maskApplied Physics Letters, 1987
- Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definitionApplied Physics Letters, 1977