Determination of the composition of sputtered silcon oxynitride films by Auger electron spectroscopy and Rutherford backscattering spectrometry
- 1 December 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 167 (1-2) , L1-L6
- https://doi.org/10.1016/0040-6090(88)90509-3
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- IR transmittance studies of hydrogen-free and hydrogenated silicon nitride and silicon oxynitride films deposited by reactive sputteringThin Solid Films, 1987
- Hydrogenation of silicon nitride and silicon oxynitride films deposited by reactive sputtering: Optical propertiesPhysica Status Solidi (a), 1987
- The role of hydrogen in silicon nitride and silicon oxynitride filmsThin Solid Films, 1985
- Electron and ion beam effects in amorphous SiO2and Si3N4films for electronic devicesRadiation Effects, 1982