A note on the assumption of quasiequilibrium in semiconductor junction devices
- 1 December 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (12) , 5389-5391
- https://doi.org/10.1063/1.323550
Abstract
The usual junction relations connecting the number densities of minority and majority carriers across the junction or depletion layer of a p‐n junction are only applicable to conditions pertaining to low‐level injection. Although this fact has been suspected to be true for a long time, the general consensus has been that only exact numerical calculations will reveal at which injection level the simple junction relations become incorrect. Here we wish to point out that simple algebraic manipulations of the quasiequilibrium equations valid at very low injection levels suffice to show at what injection level the quasiequilibrium theory becomes untenable under a given circumstance. Thus, a new and simple method is provided to ascertain if an extensive numerical calculation is warranted in order to obtain meaningful device characteristics.This publication has 5 references indexed in Scilit:
- An accurate numerical one-dimensional solution of the p-n junction under arbitrary transient conditionsSolid-State Electronics, 1968
- The Conduction-Diffusion Theory of Semiconductor JunctionsJournal of Applied Physics, 1967
- A Reappraisal of Certain Aspects of Transistor TheoryJournal of Electronics and Control, 1964
- Analysis of Current Flow in a Planar Junction Diode at a High Forward BiasJournal of Electronics and Control, 1958
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949