Processing high-quality silicon for microstrip detectors
- 30 April 1992
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 32 (1-3) , 366-371
- https://doi.org/10.1016/0924-4247(92)80014-t
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Qualification of the fabrication process for Si detectors by neutron activation analysisNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1991
- Preparation of low-noise high-quality silicon microstrip detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1990
- Processing high-purity silicon used for sensor applicationsSensors and Actuators, 1989
- Temperature Dependence of Damage in Boron-Implanted SiliconMRS Proceedings, 1989
- Characterization and analysis of detector materials and processesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1987
- Rapid isothermal annealing of boron ion implanted junctionsJournal of Applied Physics, 1983
- The concept of generation and recombination lifetimes in semiconductorsIEEE Transactions on Electron Devices, 1982
- Fabrication of low noise silicon radiation detectors by the planar processNuclear Instruments and Methods, 1980
- A theoretical investigation on the generation current in silicon p-n junctions under reverse biasSolid-State Electronics, 1972