Processing high-purity silicon used for sensor applications
- 1 March 1989
- journal article
- Published by Elsevier in Sensors and Actuators
- Vol. 16 (3) , 287-298
- https://doi.org/10.1016/0250-6874(89)87010-6
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Charge carrier lifetime measurements on high purity siliconNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1987
- Characterization and analysis of detector materials and processesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1987
- The effect of thermal and radiation defects on the recombination properties of the base region of diffused silicon p-n structuresSolid-State Electronics, 1986
- The annealing of 1 MeV implantations of boron in siliconSolid-State Electronics, 1985
- Strip detector-CCD coupling by means of a bipolar transistorNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1984
- The production and availability of high resistivity silicon for detector applicationNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1984
- The concept of generation and recombination lifetimes in semiconductorsIEEE Transactions on Electron Devices, 1982
- Fabrication of low noise silicon radiation detectors by the planar processNuclear Instruments and Methods, 1980
- Some properties of ion-implanted p−n junctions in siliconSolid-State Electronics, 1976
- Optimization of Diode Structures for Monolithic Integrated Microwave CircuitsIEEE Journal of Solid-State Circuits, 1968