The annealing of 1 MeV implantations of boron in silicon
- 1 May 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (5) , 427-433
- https://doi.org/10.1016/0038-1101(85)90103-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Low pressure chemical vapour deposition at quasi-high flowThin Solid Films, 1984
- Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped siliconIEEE Transactions on Electron Devices, 1983
- Resistivity‐Dopant Density Relationship for Boron‐Doped SiliconJournal of the Electrochemical Society, 1980
- The doping concentrations of indium-doped silicon measured by Hall, C-V, and junction-breakdown techniquesJournal of Applied Physics, 1978
- The range of doubly charged boron ionsJournal of Physics D: Applied Physics, 1977
- Electrical properties of silicon implanted with boron ions of MeV energyRadiation Effects, 1973
- Ion-implanted planar resistorsRadiation Effects, 1971
- The implanted profiles of boron, phosphorus and arsenic in silicon from junction depth measurementsSolid-State Electronics, 1970
- Semiconductor Doping by High Energy 1–2.5 Mev Ion ImplantationJournal of the Electrochemical Society, 1968