The effect of thermal and radiation defects on the recombination properties of the base region of diffused silicon p-n structures
- 31 October 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (10) , 1041-1051
- https://doi.org/10.1016/0038-1101(86)90104-8
Abstract
No abstract availableKeywords
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