Comments on ‘‘Carrier recombination through shallow donor/acceptor levels in heavily doped silicon’’
- 1 May 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (5) , 2857-2859
- https://doi.org/10.1063/1.332279
Abstract
Carrier recombination through shallow donor/acceptor levels in heavily doped silicon is analyzed. It is found that the Shockley, Read, and Hall theory of recombination is unable to explain the sharp decrease in lifetime with increasing dopant concentrations. However, trap assisted Auger recombination through these levels satisfactorily explains the observed lifetimes as well as their temperature dependences.This publication has 15 references indexed in Scilit:
- Recombination mechanism in heavily doped siliconSolid-State Electronics, 1982
- Emitter effects in shallow bipolar devices: Measurements and consequencesIEEE Transactions on Electron Devices, 1980
- Carrier recombination through donors/acceptors in heavily doped siliconApplied Physics Letters, 1979
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977
- Auger-rekombination in SiSolid State Communications, 1973
- Non‐Radiative Transitions in SemiconductorsPhysica Status Solidi (b), 1970
- Semiconductor-to-Metal Transition in-Type Group IV SemiconductorsReviews of Modern Physics, 1968
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967
- Auger recombination and impact ionization involving traps in semiconductorsProceedings of the Physical Society, 1964
- Auger effect involving recombination centresProceedings of the Physical Society, 1964