Recombination mechanisms and doping density in silicon
- 1 July 1983
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (7) , 3935-3937
- https://doi.org/10.1063/1.332568
Abstract
Carrier recombination in silicon is analyzed as a function of doping density. Two mechanisms are identified: one for the low concentration range and one, of the Auger type, for the high concentration range. Disagreements with the theoretical predictions for the Auger process are discussed and empirical laws connecting lifetime to dopant concentration are determined.This publication has 20 references indexed in Scilit:
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