Electroreflectance of GaSe single crystals in higher interband transition region
- 10 May 1972
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 5 (9) , L95-L98
- https://doi.org/10.1088/0022-3719/5/9/001
Abstract
The absorption coefficient, reflectivity and electroreflectance of the layer compound gallium selenide in the photon energy region 3 eV to 4.2 eV were measured at room temperature and at 90 K. It is found that there exist four structures at 3.36 eV, 3.70 eV, 3.9 eV and 4.1 eV at 90 K. A tentative assignment of the types of critical points is made.Keywords
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