Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2
- 1 August 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (8) , 805-810
- https://doi.org/10.1007/bf02665519
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Selective removal of a Si0.7Ge0.3 layer from Si(100)Applied Physics Letters, 1991
- Selective low-pressure chemical vapor deposition of Si1−xGex alloys in a rapid thermal processor using dichlorosilane and germaneApplied Physics Letters, 1990
- The reduction of hydrogen peroxide at silicon in weak alkaline solutionsElectrochimica Acta, 1990
- A Mechanistic Study of Silicon Etching in NH 3 / H 2 O 2 Cleaning SolutionsJournal of the Electrochemical Society, 1990
- A Si0.7Ge0.3 strained-layer etch stop for the generation of thin layer undoped siliconApplied Physics Letters, 1990
- Characterization of LPCVD of Silicon Nitride in a Rapid Thermal ProcessorMRS Proceedings, 1989
- Chemical Etching of GermaniumJournal of the Electrochemical Society, 1988
- Chemical Etching of Germanium with H3PO4–H2O2–H2O SolutionJapanese Journal of Applied Physics, 1982
- Peroxide Etching of GermaniumJournal of the Electrochemical Society, 1967
- Chemical Etching of Germanium in Solutions of HF, HNO[sub 3], H[sub 2]O, and HC[sub 2]H[sub 3]O[sub 2]Journal of the Electrochemical Society, 1964