Mathematical model for a radioactive marker in silicide formation
- 15 June 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (12) , 4187-4193
- https://doi.org/10.1063/1.333037
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Behavior and Influence of Oxygen in Chromium Silicide FormationThin Solid Films, 1983
- Radioactive 31Si marker studies of metal silicide formation—computer simulationThin Solid Films, 1982
- Studies of the Growth and Oxidation of Metal‐Silicides Using Radioactive 31Si as TracerJournal of the Electrochemical Society, 1981
- An interface — marker technique applied to the study of metal silicide growthNuclear Instruments and Methods, 1980
- The formation of NiSi from Ni2Si studied with a platinum markerThin Solid Films, 1978
- Marker studies of silicide formation, silicon self-diffusion and silicon epitaxy using radioactive silicon and Rutherford backscatteringNuclear Instruments and Methods, 1978
- Radioactive silicon tracer studies of the formation of CrSi2on Pd2Si and PtSiPhilosophical Magazine A, 1978
- Radioactive silicon as a marker in thin-film silicide formationApplied Physics Letters, 1977
- Iron silicide thin film formation at low temperaturesThin Solid Films, 1975
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975