A Few Techniques for Preparing Conductive Material Films for Sputtering-Type Electron Cyclotron Resonance Microwave Plasma
- 1 March 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (3A) , L503
- https://doi.org/10.1143/jjap.28.l503
Abstract
A few techniques are developed for preparing conductive material films for sputtering type electron cyclotron resonance microwave plasma. Microwave pressure window contamination, which is the most serious obstacle to conductive film preparation, can be avoided by using a vacuum microwave guide. Dense plasmas of 1011 cm-3 are obtained at a gas pressure of 10-2 Pa, and several metal films, including Al, Mo, Cu, and Fe films, are continuously deposited. Much denser plasmas of 1012 cm-3 are generated by high rate sputtering apparatus with an electric mirror, and films are deposited at rates of over 2000Å/min.Keywords
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