Mobile ions in SiO2: Potassium
- 1 March 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (3) , 1127-1130
- https://doi.org/10.1063/1.323790
Abstract
Mobile potassium ions have been conclusively identified in SiO2 using the high‐temperature triangular voltage sweep technique, the bias temperature C‐V technique, and ion microprobe studies. The source of the potassium has been found to be the tungsten filaments used for the aluminum gate metallization. Cautions regarding use of the high‐temperature triangular voltage sweep technique for measuring mobile ions in MOS structures are discussed.This publication has 12 references indexed in Scilit:
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