Temperature dependence of the picosecond carrier relaxation in silicon-irradiated silicon-on-sapphire films

1 September 1987

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 62 (5) , 1850-1855
https://doi.org/10.1063/1.339568

Abstract

The temperature dependence of the free‐carrier relaxation in ion‐irradiated silicon‐on‐sapphire films has been investigated by picosecond photoconductivity measurements in the temperature range 90–295 K. The relaxation time of the photoconductivity decreases markedly with decreasing temperature in samples irradiated with small doses (1⁴ cm⁻²) of Si ions, whereas nearly amorphized samples show no temperature dependence. This behavior is well described within a multiple‐trapping model taking into account structural defects that are built in during the evaporation of the films as well as introduced by the ion irradation.

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