Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts
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- 9 November 2006
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 6 (12) , 2660-2666
- https://doi.org/10.1021/nl0613858
Abstract
Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10−30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 107. The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 μm, and decreased exponentially for gate lengths exceeding 1 μm.Keywords
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