Proprietes electriques des jonctions d'antimoniure d'indium de grande surface
- 31 January 1964
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 7 (1) , 1-16
- https://doi.org/10.1016/0038-1101(64)90117-0
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Photoconductivity in P-type indium antimonide with deep acceptor impuritiesJournal of Physics and Chemistry of Solids, 1961
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Carrier Lifetime in Indium AntimonidePhysical Review B, 1961
- Internal Field Emission at NarrowJunctions in Indium AntimonidePhysical Review B, 1960
- Recombination Processes in-Type Indium AntimonidePhysical Review B, 1959
- Reverse Breakdown in In-Ge Alloy JunctionsJournal of Applied Physics, 1958
- Internal Field Emission in SiliconJunctionsPhysical Review B, 1957
- Microplasmas in SiliconPhysical Review B, 1957
- Avalanche Injection in SemiconductorsProceedings of the Physical Society. Section B, 1956
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949