Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs

1 July 1987

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 26 (7A) , L1122-1124
https://doi.org/10.1143/jjap.26.l1122

Abstract

Disordering in Si implanted GaAs/AlGaAs superlattices is studied by secondary ion mass spectrometry. Samples implanted with 160 keV Si⁺ at doses 3×10¹³ to 3×10¹⁵ cm^-2 are examined before and after 1 h annealing with an SiO₂ cap. Dual implantation of 160 keV and 40 keV Si⁺ is also examined. The results indicate that the disordering of the surface region can be controlled by the concentration balance of implantation-induced defects and Si.

Keywords

This publication has 11 references indexed in Scilit:

Ion-Implantation Induced Damage in Al_xGa_1-xAs and Superlattices Studied by Rutherford Backscattering
Japanese Journal of Applied Physics, 1987
Correlation between Si diffusion and Si-induced disordering in AlGaAs/GaAs superlattices
Superlattices and Microstructures, 1986
Dose-dependent mixing of AlAs-GaAs superlattices by Si ion implantation
Applied Physics Letters, 1986
Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry
Japanese Journal of Applied Physics, 1986
Fabrication of Index-Guided AlGaAs Multiquantum Well Lasers with Buried Optical Guide by Si-Induced Disordering
Japanese Journal of Applied Physics, 1986
SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs–GaAs Superlattice
Japanese Journal of Applied Physics, 1986
Si-implanted and disordered stripe-geometry AlxGa1−xAs-GaAs quantum well lasers
Applied Physics Letters, 1985
Interdiffusion of Al and Ga in Si-Implanted GaAs–AlAs Superlattices
Japanese Journal of Applied Physics, 1984
Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
Japanese Journal of Applied Physics, 1984
Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model
Applied Physics Letters, 1984