MBE growth and electrical behaviour of single and double Si δ-doped InGaAs-layers
- 1 December 1991
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (12) , 989-991
- https://doi.org/10.1007/bf03030194
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Redistribution of beryllium in InP and Ga0.47In0.53as grown by hydride source molecular beam epitaxy and metalorganic molecular beam epitaxyJournal of Crystal Growth, 1991
- Theory and experiment of capacitance-voltage profiling on semiconductors with quantum-confinementJournal of Electronic Materials, 1990
- Spatial localization of impurities in δ-doped GaAsApplied Physics Letters, 1988
- Delta- (°-) doping in MBE-grown GaAs: Concept and device applicationJournal of Crystal Growth, 1987
- The delta-doped field-effect transistor (δFET)IEEE Transactions on Electron Devices, 1986
- Heavily Si-doped InGaAs lattice-matched to InP grown by MBEElectronics Letters, 1986
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978