Diffusion limited oxygen precipitation in silicon: Precipitate growth kinetics and phase formation
- 15 September 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (6) , 4297-4299
- https://doi.org/10.1063/1.359832
Abstract
Published experimental data on silicon oxide precipitate growth kinetics are interpreted in the framework of the theory of Ham for diffusion limited precipitation. A growth law for plate-like, octahedral and spherical precipitates is derived showing a size dependence which varies as the square root of time. Using well accepted data for the solubility and the diffusion constant of oxygen in silicon, the calculations suggest that the precipitated phase is closer to SiO than to SiO2.This publication has 13 references indexed in Scilit:
- Influence of the first thermal cycles of an IC process on oxygen precipitation in CZ silicon wafers: a detailed analysisSemiconductor Science and Technology, 1994
- Morphology and growth process of thermally induced oxide precipitates in Czochralski siliconJournal of Applied Physics, 1993
- Interlaboratory Determination of Oxygen in Silicon for Certified Reference MaterialsJournal of the Electrochemical Society, 1992
- Electron Energy Loss Microspectroscopy: Small Particles in SiliconMRS Proceedings, 1985
- An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free siliconJournal of Physics C: Solid State Physics, 1984
- Oxygen precipitation and microdefects in Czochralski-grown silicon crystalsPhysica Status Solidi (a), 1984
- Oxygen diffusion and thermal donor formation in siliconApplied Physics A, 1982
- Minority carrier lifetime in annealed silicon crystals containing oxygenPhysica Status Solidi (a), 1978
- Theory of diffusion-limited precipitationJournal of Physics and Chemistry of Solids, 1958
- Radially symmetric phase growth controlled by diffusionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1950